• DocumentCode
    2754497
  • Title

    Laser Annealed Ni(Ti) Silicides Formation

  • Author

    Setiawan, Y. ; Lee, P.S. ; Pey, K.L. ; Wang, X.C. ; Lim, G.C. ; Chow, F.L.

  • Author_Institution
    Sch. of Mater. Sci. & Eng., Nanyang Technol. Univ., Singapore
  • fYear
    2006
  • fDate
    10-13 Oct. 2006
  • Firstpage
    223
  • Lastpage
    227
  • Abstract
    Effect of Ti alloying during both RTA and LTA on Ni silicide formation is studied. In the RTA annealed samples, Ni3Si2 was found to be the first silicide formed at 600degC and stable up to 900degC. On the other hand, unique triple layer microstructures were found in the sample after single-pulsed LTA at high laser fluence. Ti rapidly segregates from the alloy melt and forms a protective TiOx overlayer on the surface during rapid solidification
  • Keywords
    laser beam annealing; metallisation; nickel compounds; ohmic contacts; rapid thermal annealing; titanium compounds; 600 C; LTA; Ni(Ti) silicides formation; Ni3Si2; RTA; Ti; TiOx; laser annealing; laser fluence; nickel silicide formation; rapid solidification; triple layer microstructures; Annealing; Laser beam cutting; MOSFET circuits; Manufacturing processes; Materials science and technology; Optical device fabrication; Pulp manufacturing; Semiconductor lasers; Silicides; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Thermal Processing of Semiconductors, 2006. RTP '06. 14th IEEE International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    1-4244-0648-X
  • Electronic_ISBN
    1-4244-0649-8
  • Type

    conf

  • DOI
    10.1109/RTP.2006.368004
  • Filename
    4223131
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2754497