DocumentCode :
2754497
Title :
Laser Annealed Ni(Ti) Silicides Formation
Author :
Setiawan, Y. ; Lee, P.S. ; Pey, K.L. ; Wang, X.C. ; Lim, G.C. ; Chow, F.L.
Author_Institution :
Sch. of Mater. Sci. & Eng., Nanyang Technol. Univ., Singapore
fYear :
2006
fDate :
10-13 Oct. 2006
Firstpage :
223
Lastpage :
227
Abstract :
Effect of Ti alloying during both RTA and LTA on Ni silicide formation is studied. In the RTA annealed samples, Ni3Si2 was found to be the first silicide formed at 600degC and stable up to 900degC. On the other hand, unique triple layer microstructures were found in the sample after single-pulsed LTA at high laser fluence. Ti rapidly segregates from the alloy melt and forms a protective TiOx overlayer on the surface during rapid solidification
Keywords :
laser beam annealing; metallisation; nickel compounds; ohmic contacts; rapid thermal annealing; titanium compounds; 600 C; LTA; Ni(Ti) silicides formation; Ni3Si2; RTA; Ti; TiOx; laser annealing; laser fluence; nickel silicide formation; rapid solidification; triple layer microstructures; Annealing; Laser beam cutting; MOSFET circuits; Manufacturing processes; Materials science and technology; Optical device fabrication; Pulp manufacturing; Semiconductor lasers; Silicides; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2006. RTP '06. 14th IEEE International Conference on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-0648-X
Electronic_ISBN :
1-4244-0649-8
Type :
conf
DOI :
10.1109/RTP.2006.368004
Filename :
4223131
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2754497
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