Impact of NI Layer Thickness and Anneal Time on Nickel Silicide Formation by Rapid Thermal Processing

Author

Huelsmann, T. ; Niess, J. ; Lerch, W. ; Fursenko, O. ; Bolze, D.

Author_Institution

Mattson Thermal Products, Dornstadt

fYear

2006

fDate

10-13 Oct. 2006

Firstpage

237

Lastpage

242

Abstract

The effects of different initial Ni layer thickness and various anneal times during the nickel silicidation process have been investigated as a function of rapid thermal annealing temperature between 200 and 800degC. By means of electrical and optical measurements the Ni silicide phase transformations are explained. Spectroscopic ellipsometry has been used to measure Ni and Ni silicide thickness. An oxide on the Ni layer was found to be generated, if the time between Ni deposition and annealing is not short enough. Also a method to monitor the Ni silicidation process on RTP systems was introduced

Keywords

ellipsometry; metallisation; nickel compounds; rapid thermal annealing; semiconductor-metal boundaries; thickness measurement; 200 to 800 C; Ni-Si; NiSi; anneal time; electrical measurement; layer thickness; nickel silicidation process; nickel silicide formation; optical measurement; phase transformations; rapid thermal annealing; rapid thermal processing; spectroscopic ellipsometry; Electric variables measurement; Ellipsometry; Nickel; Phase measurement; Rapid thermal annealing; Rapid thermal processing; Silicidation; Silicides; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Thermal Processing of Semiconductors, 2006. RTP '06. 14th IEEE International Conference on

Conference_Location

Kyoto

Print_ISBN

1-4244-0648-X

Electronic_ISBN

1-4244-0649-8

Type

conf

DOI

10.1109/RTP.2006.368006

Filename

4223133