Title :
Titanium Silicide Formation: Process Characterization Using Single Wafer Rapid Thermal Furnace System
Author :
Garroux, Dominique ; Ouaknine, Michel ; Malik, Igor J. ; Fukada, Takashi ; Odera, Masato ; Ishigaki, Toshikazu ; Ueda, Takeshi ; Yoo, Woo Sik
Author_Institution :
Altis Semicond., Corbeil Essonnes
Abstract :
Formation of titanium silicide was studied using a "hot wall" single wafer rapid thermal furnace (SRTF) system. Average sheet resistance and uniformity of TiSi2 films before and after processing, as well as process repeatability were evaluated. We also collected data for annealing of implanted wafers, oxide thickness & uniformity before and after dry and wet oxidation. We use this data to demonstrate process repeatability for anneals in the SRTF system. Comparison with wafers processed with Altis Semiconductor tool of record (TOR) gave some useful information regarding differences between wafers processed in lamp-based RTA and SRTF systems
Keywords :
oxidation; rapid thermal annealing; semiconductor technology; sheet materials; titanium compounds; Si; TiSi2; TiSi2 films; dry oxidation; hot wall single wafer rapid thermal furnace system; oxide thickness; process characterization; process repeatability; rapid thermal annealing; sheet resistance; titanium silicide formation; wet oxidation; Assembly; Furnaces; Manufacturing processes; Oxidation; Rapid thermal annealing; Rapid thermal processing; Silicides; Silicon carbide; Temperature control; Titanium;
Conference_Titel :
Advanced Thermal Processing of Semiconductors, 2006. RTP '06. 14th IEEE International Conference on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-0648-X
Electronic_ISBN :
1-4244-0649-8
DOI :
10.1109/RTP.2006.368009
