Title :
Performance evaluation of SiC power MOSFETs for high-temperature applications
Author :
Zheng Chen ; Yiying Yao ; Danilovic, Milisav ; Boroyevich, Dushan
Author_Institution :
Bradley Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
In this paper, the high-temperature performance of the commercial SiC power MOSFETs has been extensively evaluated beyond 125 °C - the maximum junction temperature according to the datasheet. Both the static and switching characteristics have been measured under various temperatures up to 200 °C. The results show the superior electrical performance of the SiC MOSFETs for high-temperature operation. Meanwhile, the gate biasing and gate switching tests have also been conducted to test the gate oxide reliability of these devices under elevated temperatures. The test results reveal the degradation in the device characteristics under high temperature and different gate voltage conditions, which exhibit the trade-off between the performance and the reliability of SiC MOSFETs for high-temperature applications.
Keywords :
power MOSFET; power semiconductor switches; reliability; semiconductor device testing; SiC; SiC power MOSFET performance evaluation; gate biasing test; gate oxide reliability; gate switching test; high-temperature application; maximum junction temperature; static characteristics; switching characteristics; Logic gates; MOSFETs; Silicon; Silicon carbide; Switches; Temperature; Temperature measurement; SiC MOSFET; device characterization; gate oxide reliability; high-temperature;
Conference_Titel :
Power Electronics and Motion Control Conference (EPE/PEMC), 2012 15th International
Conference_Location :
Novi Sad
Print_ISBN :
978-1-4673-1970-6
Electronic_ISBN :
978-1-4673-1971-3
DOI :
10.1109/EPEPEMC.2012.6397198
