DocumentCode
2755173
Title
DIBL coefficient in short-channel NMOS transistors
Author
Ghitani, H. El
Author_Institution
Dept. of Electron. & Commun. Eng., Ain Shams Univ., Cairo, Egypt
fYear
1999
fDate
23-25 Feb 1999
Abstract
A study of the drain induced barrier lowering (DIBL) effect in short-channel NMOS transistors is presented. The study is based on the two dimensional analytical solution of Poisson equation in the depletion region under the gate. A closed form analytical expression for the DIBL coefficient is derived and its temperature dependence is investigated. The numerical results obtained are in close agreement with the experimental data. The derived expression could be efficiently used in circuit simulation programs
Keywords
MOSFET; Poisson equation; semiconductor device models; DIBL coefficient; Poisson equation; circuit simulation; closed form analytical expression; depletion region; drain induced barrier lowering effect; short-channel NMOS transistors; temperature dependence; two dimensional analytical solution; Circuit simulation; Distribution functions; Doping profiles; MOSFET circuits; Numerical simulation; Poisson equations; Temperature dependence; Threshold voltage; Ultra large scale integration; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Science Conference, 1999. NRSC '99. Proceedings of the Sixteenth National
Conference_Location
Cairo
Print_ISBN
977-5031-62-1
Type
conf
DOI
10.1109/NRSC.1999.760932
Filename
760932
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