Title :
Study of the subthreshold performance and the effect of channel engineering on deep submicron single stage CMOS amplifiers
Author :
Debnath, Asish ; Chakroborty, Saurav ; Sarkar, Chandan Kumar ; Mallik, Abhjit
Author_Institution :
JU, Kolkata
fDate :
Oct. 30 2007-Nov. 2 2007
Abstract :
This paper outlines the advantage of using a single stage CMOS cascode amplifier over CMOS current source amplifier both operating in sub threshold region. Apart from ultra low power applications the cascaode amplifier is being able to produce high voltage gain and low output capacitance. The impact of single-halo or lateral asymmetric channel doping on 180 nm MOS devices amplifier circuit is being investigated. The CMOS PTAT (proportional to absolute temperature) circuit as a temperature sensor for low power applications is also proposed.
Keywords :
CMOS integrated circuits; amplifiers; temperature sensors; CMOS current source amplifier; channel engineering; deep submicron single stage CMOS cascode amplifiers; lateral asymmetric channel doping; single-halo; size 180 nm; temperature sensor; Analog circuits; Bandwidth; CMOS analog integrated circuits; CMOS technology; Capacitance; Current measurement; Doping; Signal analysis; Temperature sensors; Voltage;
Conference_Titel :
TENCON 2007 - 2007 IEEE Region 10 Conference
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-1272-3
Electronic_ISBN :
978-1-4244-1272-3
DOI :
10.1109/TENCON.2007.4429076
