Study of the subthreshold performance and the effect of channel engineering on deep submicron single stage CMOS amplifiers

Author

Debnath, Asish ; Chakroborty, Saurav ; Sarkar, Chandan Kumar ; Mallik, Abhjit

Author_Institution

JU, Kolkata

fYear

2007

fDate

Oct. 30 2007-Nov. 2 2007

Firstpage

1

Lastpage

4

Abstract

This paper outlines the advantage of using a single stage CMOS cascode amplifier over CMOS current source amplifier both operating in sub threshold region. Apart from ultra low power applications the cascaode amplifier is being able to produce high voltage gain and low output capacitance. The impact of single-halo or lateral asymmetric channel doping on 180 nm MOS devices amplifier circuit is being investigated. The CMOS PTAT (proportional to absolute temperature) circuit as a temperature sensor for low power applications is also proposed.

Keywords

CMOS integrated circuits; amplifiers; temperature sensors; CMOS current source amplifier; channel engineering; deep submicron single stage CMOS cascode amplifiers; lateral asymmetric channel doping; single-halo; size 180 nm; temperature sensor; Analog circuits; Bandwidth; CMOS analog integrated circuits; CMOS technology; Capacitance; Current measurement; Doping; Signal analysis; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2007 - 2007 IEEE Region 10 Conference

Conference_Location

Taipei

Print_ISBN

978-1-4244-1272-3

Electronic_ISBN

978-1-4244-1272-3

Type

conf

DOI

10.1109/TENCON.2007.4429076

Filename

4429076