DocumentCode :
2755859
Title :
Yttria stabilized zirconia thin film prepared by RF magnetron sputtering method
Author :
Onuma, Y. ; Yamakawa, Hiroshi ; Tomura, Takehiko ; Kunugi, Kazumasa ; Kamimura, Kiichi
Author_Institution :
Dept. of Electr. Eng., Shinshu Univ., Nagano, Japan
fYear :
1989
fDate :
26-28 Apr 1989
Firstpage :
32
Lastpage :
35
Abstract :
Yttria-stabilized zirconia (YSZ) thin films were obtained by RF magnetron sputtering using sintered YSZ targets. Three types of target were used in order to investigate the effect of the amount of Y2 O3. These contained 3, 9, and 20 mol.% Y2O 3 as the stabilizer. The effects of preparation conditions and the physical and electrical properties were examined by X-ray diffraction analysis, I-V measurement of an MOS structure fabricated by evaporating Al electrode on YSZ film in Si, and measurements of photoabsorption characteristics. Crystallinity of the sputtered layer depended on the substrate temperature. For substrate temperatures above 300°C, polycrystalline YSZ film was obtained. The phase of the film was dominated by the amount of doped Y2O 3 in the target. The dielectric constant and optical energy gap were found to be 24.5~28.6 and ~4.4 eV, respectively. Using the YSZ film as a buffer layer on an alumina substrate, superconducting properties of Y-Ba-Cu-O were observed. The gas-sensitive properties of the films were confirmed
Keywords :
X-ray diffraction examination of materials; barium compounds; electronic conduction in insulating thin films; high-temperature superconductors; insulating thin films; optical properties of substances; permittivity; sputter deposition; sputtered coatings; superconducting thin films; yttrium compounds; zirconium compounds; 300 degC; Al electrode; Al2O3 substrate; I-V measurement; MOS structure; RF magnetron sputtering; Si; X-ray diffraction analysis; Y2O3 dopant; YBaCuO-ZrO2:Y2O3-Al2O 3; alumina substrate; crystallinity; dielectric constant; electrical properties; gas-sensitive properties; high temperature superconductors; optical energy gap; photoabsorption characteristics; polycrystalline film; preparation conditions; sintered targets; sputtered layer; substrate temperature; superconducting properties; yttria stabiliser; Dielectric substrates; Electric variables measurement; Electrodes; Optical films; Radio frequency; Sputtering; Superconducting films; Superconducting magnets; Transistors; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Manufacturing Technology Symposium, 1989, Proceedings. Japan IEMT Symposium, Sixth IEEE/CHMT International
Conference_Location :
Nara
Type :
conf
DOI :
10.1109/IEMTS.1989.76104
Filename :
76104
Link To Document :
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