Title :
AlGaN Schottky diodes for detector applications in the UV wavelength range
Author :
Hellings, Geert ; Joachim, J. ; Lorenz, Anne ; Mertens, Robert
Author_Institution :
IMEC, Heverlee
Abstract :
We report on the use of TCAD simulations to optimize AlGaN UV-detectors for space applications and advanced EUV lithography tools. (i) High dark current in present AlGaN Schottky diodes is explained by means of the Thin Surface Barrier model. (ii) This model and AlGaN material properties were implemented in TCAD software and verified with experimental results, facilitating future technology development. (iii) Key issues in technology development were identified and experimentally verified: reducing surface defects is shown to result in order-of-magnitude dark current reduction. (iv) A full semi-transparent Schottky contact is shown to provide a good compromise between low leakage and sufficient photocurrent.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; aerospace instrumentation; aluminium compounds; dark conductivity; gallium compounds; leakage currents; photoconductivity; photolithography; ultraviolet detectors; wide band gap semiconductors; AlGaN; EUV lithography tools; Schottky diodes; TCAD simulations; UV wavelength range; UV-detectors; detector applications; leakage current; order-of-magnitude dark current reduction; photocurrent; semitransparent Schottky contact; thin surface barrier model; Aluminum gallium nitride; Application software; Dark current; Detectors; Lithography; Material properties; Schottky barriers; Schottky diodes; Software tools; Space technology; Aluminum Compounds; Gallium Compounds; Photolithography; Schottky barriers; Schottky diodes; Ultraviolet detectors;
Conference_Titel :
Electrotechnical Conference, 2008. MELECON 2008. The 14th IEEE Mediterranean
Conference_Location :
Ajaccio
Print_ISBN :
978-1-4244-1632-5
Electronic_ISBN :
978-1-4244-1633-2
DOI :
10.1109/MELCON.2008.4618554
