Investigation of AlGaN/GaN/AlGaN metal -oxide-semiconductor high electron mobility transistors

A photoelectrochemical (PEC) oxidation method was used to grow oxide films on AlGaN surface directly as gate insulator for AlGaN/GaN/AlGaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs). The threshold voltage of AlGaN/GaN/AlGaN MOS-HEMT devices is -3.5 V The gate leakage current is 1.8 times 10^-5 A at reverse gate bias of V_GS = -10 V. Maximum value of g_m is 53.8 mS/mm biased at V_GS = -0.87 V. The current collapse is not obvious in the MOS-HEMT devices.