Title :
Design, characterization and modelling of a CMOS magnetic field sensor
Author :
Latorre, L. ; Bertrand, Y. ; Hazard, P. ; Pressecq, F. ; Nouet, P.
Author_Institution :
LIRMM, Univ. des Sci. et Tech. du Languedoc, Montpellier, France
Abstract :
This paper presents both the design and the characterization of a full CMOS magnetic field sensor. As an alternative to Hall effect sensors, it acts as a microscopic cantilever, deformed under the action of the Lorentz force.
Keywords :
CMOS integrated circuits; frequency-domain analysis; magnetic sensors; micromechanical resonators; microsensors; semiconductor device models; Lorentz force; MEMS; anisotropic etching; frequency-domain response; full CMOS magnetic field sensor; microscopic cantilever; modelling; sensor characterization; sensor design; suspended structures; Application specific integrated circuits; CMOS process; CMOS technology; Costs; Magnetic sensors; Manufacturing; Mechanical sensors; Semiconductor device modeling; Sensor phenomena and characterization; Silicon;
Conference_Titel :
Design, Automation and Test in Europe Conference and Exhibition 1999. Proceedings
Conference_Location :
Munich, Germany
Print_ISBN :
0-7695-0078-1
DOI :
10.1109/DATE.1999.761128
