• DocumentCode
    2756667
  • Title

    Photoluminescence lifetime distributions of amorphous and porous semiconductors, and organic luminescent materials; wideband quadrature frequency resolved spectroscopy extending over 11 decades

  • Author

    Aoki, T. ; Ikeda, K. ; Urashima, T. ; Kaneko, T. ; Saitou, D. ; Kobayashi, S.

  • Author_Institution
    Dept. of Electron. & Comput. Eng., Tokyo Polytech Univ.
  • fYear
    2005
  • fDate
    1-4 May 2005
  • Firstpage
    211
  • Lastpage
    214
  • Abstract
    Here we present a newly developed wideband quadrature frequency resolved spectroscopy (QFRS) allowing analysis of photoluminescence (PL) lifetime over almost 11 decades (2 ns to 160 s). The system consists of dual phase double lock-in (DPDL) QFRS for lifetimes from ns to mus and internal mode QFRS for longer lifetime up to 160 s. The QFRS results of amorphous semiconductors exhibit the triple-peaked structures of lifetime distribution, well-known two peaks of which are attributed to singlet- and triplet-excitons, and the third and longest one, to distant-pair recombination being typical for amorphous materials. We also demonstrate double-peaked lifetime distributions of highly Ir(ppy) 3-doped organic films as well as rapidly oxidized porous silicon (PS)
  • Keywords
    amorphous semiconductors; carrier lifetime; excitons; organic semiconductors; photoluminescence; porous semiconductors; semiconductor thin films; amorphous semiconductors; double-peaked lifetime distributions; dual phase double lock-in; organic films; organic luminescent materials; photoluminescence lifetime distributions; porous semiconductors; rapidly oxidized porous silicon; triple-peaked structures; wideband quadrature frequency resolved spectroscopy; Amorphous materials; Amorphous semiconductors; Frequency; Organic materials; Photoluminescence; Radiative recombination; Semiconductor films; Semiconductor materials; Spectroscopy; Wideband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Computer Engineering, 2005. Canadian Conference on
  • Conference_Location
    Saskatoon, Sask.
  • ISSN
    0840-7789
  • Print_ISBN
    0-7803-8885-2
  • Type

    conf

  • DOI
    10.1109/CCECE.2005.1556912
  • Filename
    1556912