Characterising trench IGBTs in resonant switching using single ended and half-bridge application circuits

Author

de Silva, D.I.M. ; Shrestha, N.K. ; Palmer, P.R. ; Udrea, F. ; Amaratunga, G.A.J. ; Chamund, D. ; Coulbeck, L. ; Waind, P.

Author_Institution

Dept. of Eng., Cambridge Univ., UK

Volume

1

fYear

2003

fDate

17-20 Nov. 2003

Firstpage

60

Abstract

This paper reports the behaviour of a new class of 1.2 kV, 25 A NPT trench gate IGBT in zero current switching (ZCS) and zero voltage switching (ZVS) and compares its performance with an equivalent state-of the-art DMOS IGBT. Two low-medium power application circuits are used as test circuits for characterisation. With its superior on-state modulation characteristics the trench IGBT shows better performance during conduction, particularly at high frequencies and high currents. However in the ZVS mode turn-off losses should be minimised by optimising circuit parameters in order to utilise the on-state performance advantage of the trench IGBT.

Keywords

MOSFET; bridge circuits; insulated gate bipolar transistors; optimisation; switching circuits; 1.2 kV; 25 A; DMOS IGBT; circuit parameters; half-bridge resonant inverter circuits; on-state modulation characteristics; on-state performance; optimisation; power application circuits; resonant switching; single ended resonant inverter circuits; trench IGBT; zero current switching; zero voltage switching; Circuit testing; Insulated gate bipolar transistors; Magnetic resonance; RLC circuits; Resonant frequency; Resonant inverters; Switches; Switching circuits; Zero current switching; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Drive Systems, 2003. PEDS 2003. The Fifth International Conference on

Print_ISBN

0-7803-7885-7

Type

conf

DOI

10.1109/PEDS.2003.1282679

Filename

1282679