Boron diffusion in Si, SiGe, and SiGeC

Author

Rizk, Samer ; Haddara, Yaser M.

Author_Institution

Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont.

fYear

2005

fDate

1-4 May 2005

Firstpage

344

Lastpage

347

Abstract

We have used the process simulator ISE-FLOOPS to implement a model describing the diffusion behaviors of boron and carbon in silicon and silicon germanium. The model has been tested against a wide range of sample structures and experimental conditions in published work, and proven to successfully simulate all common phenomena involving boron and carbon in SiGe systems. In particular, we consider the reduction of transient enhanced diffusion of boron due to localized carbon concentrations in SiGeC. The model takes into account carbon diffusion according to both the kickout and Frank-Turnbull mechanisms for diffusion, the effect of boron-interstitial clusters, {311} defects, and interstitial capture by substitutional carbon

Keywords

Ge-Si alloys; boron; diffusion; elemental semiconductors; germanium compounds; interstitials; silicon; silicon compounds; Frank-Turnbull mechanisms; ISE-FLOOPS; Si:B; SiGe:B; SiGeC:B; boron diffusion; boron-interstitial clusters; carbon diffusion; interstitial capture; silicon germanium; transient reduction; Annealing; Boron; Computational modeling; Computer simulation; Degradation; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Oxidation; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2005. Canadian Conference on

Conference_Location

Saskatoon, Sask.

ISSN

0840-7789

Print_ISBN

0-7803-8885-2

Type

conf

DOI

10.1109/CCECE.2005.1556942

Filename

1556942