Electronic transport in random media: examples for nanocrystalline and amorphous silicon films

Author

Shimakawa, K.

Author_Institution

Dept. of Electr. & Electron. Eng., Gifu Univ.

fYear

2005

fDate

1-4 May 2005

Firstpage

348

Lastpage

350

Abstract

Randomly distributed grain boundaries and/or random potentials dominate the electronic transport in random media. An effective medium or percolation approach is shown to be useful for understanding electronic transport for nanocrystalline and amorphous silicon films. It is shown that any transport problem in 3-dimensional (3D) random media can be reduced to 1D problem by the percolation argument. We find a universal feature of electronic transport in random media

Keywords

amorphous semiconductors; elemental semiconductors; nanostructured materials; percolation; random media; semiconductor thin films; silicon; Si; amorphous silicon films; distributed grain boundaries; electronic transport; nanocrystalline silicon films; percolation approach; random media; Amorphous silicon; Conductivity; Crystallization; Hall effect; Optical films; Random media; Semiconductor films; Solids; Temperature; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2005. Canadian Conference on

Conference_Location

Saskatoon, Sask.

ISSN

0840-7789

Print_ISBN

0-7803-8885-2

Type

conf

DOI

10.1109/CCECE.2005.1556943

Filename

1556943

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2757221