DocumentCode
2757264
Title
Dielectric properties of UV-cured epoxy films treated with Layer-by-Layer nanosilica architectures
Author
Bouanga, C. Vanga ; Couderc, H. ; Fréchette, M.F. ; Savoie, S. ; Malucelli, G. ; Camino, G. ; Carosio, F.
Author_Institution
Inst. de Rech. d´´Hydro-Quebec (IREQ), Varennes, QC, Canada
fYear
2012
fDate
10-13 June 2012
Firstpage
59
Lastpage
63
Abstract
This paper focuses on the preparation and characterization of hybrid organic-inorganic epoxy systems obtained through the application of a Layer by Layer (LbL) assembly on a UV-cured epoxy coating. To this aim, a mixture 90/10 (wt.%) of 3,4-epoxycyclohexylmethyl-3\´,4"-epoxy-cyclo-hexane carboxylate (CE)/diglycidylether-terminated polydi-methyl-siloxane (GTPDMS) was subjected to LbL deposition of 10 and 20 bilayers of silica (positively charged/negatively charged). The relationship between the dielectric properties and transition temperature (Tg) were investigated. Two dielectric relaxation modes namely α and β were observed, attributed to the molecular motions of the polymer chains. The breakdown voltage decreased with increasing number of nanosilica bilayers deposited.
Keywords
coatings; curing; dielectric relaxation; dielectric thin films; glass transition; nanostructured materials; organic-inorganic hybrid materials; polymer films; resins; silicon compounds; 3,4-epoxycyclohexylmethyl-3´,4´-epoxy-cyclo-hexane carboxylate; LbL assembly; SiO2; UV-cured epoxy coating; UV-cured epoxy film; breakdown voltage; dielectric properties; dielectric relaxation; diglycidylether-terminated polydimethyl-siloxane; glass transition temperature; hybrid organic-inorganic epoxy systems; layer-by-layer nanosilica architecture; molecular motion; polydi-methyl-siloxane; polymer chain; Dielectrics; Films; Heating; Permittivity; Polymers; Temperature measurement; UV-curing; dielectric properties; epoxy monomers; glass transition temperature; nanosilica;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulation (ISEI), Conference Record of the 2012 IEEE International Symposium on
Conference_Location
San Juan, PR
ISSN
1089-084X
Print_ISBN
978-1-4673-0488-7
Electronic_ISBN
1089-084X
Type
conf
DOI
10.1109/ELINSL.2012.6251426
Filename
6251426
Link To Document