38–80 GHz SPDT traveling wave switch MMIC utilizing fully distributed FET

Author

Mizutani, Hiroshi ; Iwata, Naotaka ; Takayama, Yoichiro ; Honjo, Kazuhiko

Author_Institution

NEC Electron. Corp., Kawasaki

fYear

2006

fDate

12-15 Dec. 2006

Firstpage

3

Lastpage

6

Abstract

This is the first report of the traveling wave SPDT switch using the fully distributed FET (FD-FET). The broadband characteristics were successfully obtained over more than an octave frequency range from Ka to W bands for the millimeter-wave applications. From 38 to 80 GHz, the low insertion loss of less than 2.1 dB, and the high isolation of better than 25.5 dB, were achieved by using the AlGaAs/InGaAs hetero-j unction FET traveling wave switch (TWSW) technology. In the design, the difference between the quasi- and the fully distributed switch circuit has been investigated.

Keywords

field effect MMIC; field effect transistors; switches; MMIC; fully distributed FET; millimeter-wave application; traveling wave SPDT switch; Cutoff frequency; Distributed parameter circuits; FETs; MMICs; Millimeter wave circuits; Millimeter wave radar; Millimeter wave technology; Power transmission lines; Switches; Switching circuits; MMIC; SPDT switch; distributed FET; millimeter-wave; traveling wave;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. APMC 2006. Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-4-902339-08-6

Electronic_ISBN

978-4-902339-11-6

Type

conf

DOI

10.1109/APMC.2006.4429367

Filename

4429367