Title :
Materials growth and device characterization of InAs quantum dot lasers
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
Summary form only given. A new semiconductor laser design name has been proposed-the dots-in-a-well (DWELL) laser. Previous InGaAs QD laser research has described the use of InGaAs layers with various indium compositions around the dots. In this presentation, a systematic study of the DWELL approach is described. In the first part, the properties of InAs QD´s grown by molecular beam epitaxy (MBE) in narrow, pseudomorphically strained InGaAs QW´s are reported
Keywords :
indium compounds; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor quantum dots; DWELL laser; InAs; InAs quantum dot lasers; InGaAs; InGaAs QD laser; InGaAs layers; MBE; dots-in-a-well laser; indium compositions; molecular beam epitaxy; narrow pseudomorphically strained InGaAs QW; semiconductor laser design; Diodes; Electrons; Gallium arsenide; Indium; Optical devices; PROM; Quantum dot lasers; Quantum dots; US Department of Transportation; Ultraviolet sources;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.893888
