Title :
Photonic crystal defect microcavities with indium arsenide quantum dots
Author :
Yoshie ; Painter, Oskar ; Scherer, Axel ; Huffaker, Diana ; Deppe, Dennis
Author_Institution :
Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA
Abstract :
The coupling of InAs QDs emission to the two dimensional photonic crystal defect cavity has been demonstrated for the first time and a narrow filtered emission linewidth could be observed. We describe the emission from 2D photonic crystals that contain an InAs QDs active layer. The epitaxial layers were grown on (001) GaAs by molecular beam epitaxy
Keywords :
III-V semiconductors; indium compounds; micro-optics; micromechanical resonators; molecular beam epitaxial growth; photonic band gap; semiconductor quantum dots; (001) GaAs; 2D photonic crystals; GaAs; InAs; InAs QDs active layer; InAs QDs emission; epitaxial layers; indium arsenide quantum dots; molecular beam epitaxy; narrow filtered emission linewidth; photonic crystal defect microcavities; Anisotropic magnetoresistance; Etching; Indium; Microcavities; Optical pumping; Photonic crystals; Quantum dots; Resonance; Superlattices; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.893889
