Multiple quantum well acousto-optic and electro-optic modulators

Author

Bhattacharjee, K.K. ; Jain, F.C.

Author_Institution

Connecticut Univ., Storrs, CT, USA

fYear

1990

fDate

4-7 Dec 1990

Firstpage

621

Abstract

Electrooptic Bragg modulator structures are proposed using the enhancement of refractive index variation due to the quantum confined Stark effect (QCSE). The electrooptic effect enhanced by the QCSE in AlGaAs-GaAs multiple quantum well (MQW) layers, is shown to result in high-performance Bragg modulators. A 100% diffraction efficiency at a wavelength of 0.885 μm is shown to be achievable using a structure 200-μm long with a loss of about 6 dB for an applied electric field in the range of 10⁵ V/cm

Keywords

III-V semiconductors; Stark effect; acousto-optical devices; aluminium compounds; electro-optical devices; gallium arsenide; optical modulation; semiconductor quantum wells; 0.885 micron; 6 dB; AlGaAs-GaAs multiple quantum wells; Bragg modulator structures; III-V semiconductors; acousto-optic modulators; diffraction efficiency; electro-optic modulators; electrooptic effect; high-performance; quantum confined Stark effect; refractive index changes; Absorption; Electrooptic modulators; Optical modulation; Optical refraction; Optical variables control; Polarization; Quantum well devices; Refractive index; Surface acoustic waves; Tellurium;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1990. Proceedings., IEEE 1990

Conference_Location

Honolulu, HI

Type

conf

DOI

10.1109/ULTSYM.1990.171438

Filename

171438