Near-terahertz passive harmonic modelocking in monolithic compound-cavity laser diodes

Author

Yanson, D.A. ; Street, M.W. ; Avrutin, E.A. ; McDougall, S.D. ; Thayne, L.G. ; Marsh, J.H.

Author_Institution

Dept. of Electron., Glasgow Univ., UK

Volume

2

fYear

2000

fDate

2000

Firstpage

438

Abstract

We report modelocking rates of up to 620 GHz from what is, to our knowledge, the first purpose fabricated monolithic compound cavity mode locked (CCM) laser diodes at 0.86 μm. The experiments here were performed with 3-section GaAs-AlGaAs double quantum-well ridge-waveguide laser diodes, incorporating a saturable absorber and two gain sections, with an etched reflector between them

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; laser mode locking; laser transitions; optical saturable absorption; quantum well lasers; ridge waveguides; waveguide lasers; 0.86 mum; 3-section GaAs-AlGaAs double quantum-well ridge-waveguide laser diodes; GaAs-AlGaAs; etched reflector; gain sections; modelocking rates; monolithic compound cavity mode locked laser diodes; monolithic compound-cavity laser diodes; near-terahertz passive harmonic modelocking; saturable absorber; Diode lasers; Etching; Heating; Local oscillators; Optical harmonic generation; Optical waveguides; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.893902

Filename

893902