DocumentCode
275779
Title
Detailed self-consistent modelling of the lateral optical fields in an N-substrate InP/InGaAsP constricted-mesa laser diode for microwave modulation applications
Author
Gurney, P.C.R. ; Ormondroyd, R.F.
Author_Institution
Bath Univ., UK
fYear
1991
fDate
25-27 Nov 1991
Firstpage
123
Lastpage
126
Abstract
High optical confinement means that many modes may be guided in the lateral direction, and it is possible for many of these modes to lase. A second problem is caused by the homojunction regions formed either side of the active layer. Current spreading at high injection can cause these regions to become forward biased. This leakage current does not contribute towards light production, and causes sub-linearity of the light-current characteristic, giving rise to harmonic distortion. A self-consistent model of the static electrical and optical properties of the constricted mesa laser has been developed to examine these problems The model includes the effects of current spreading in the p-type mesa layer and allows for the possibility the several lateral optical modes may lase simultaneously
Keywords
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser modes; laser theory; leakage currents; optical communication equipment; optical modulation; semiconductor junction lasers; InP-InGaAsP laser diode; active layer; constricted-mesa laser diode; current spreading; harmonic distortion; homojunction regions; lateral optical fields; leakage current; light-current characteristic; microwave modulation applications; n-substrate laser diode; optical confinement; optical mode lasing; p-type mesa layer; self-consistent modelling; semiconductor; static electrical properties; static optical properties;
fLanguage
English
Publisher
iet
Conference_Titel
Computation in Electromagnetics, 1991., International Conference on
Conference_Location
London
Print_ISBN
0-85296-529-X
Type
conf
Filename
140132
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