Title :
A comparison of cryogenically cooled pseudomorphic and lattice matched InP HEMTs: Implementation in an ultra-low noise amplifier
Author :
Malmros, Anna ; Wadefalk, Niklas ; Starski, Piotr ; Grahn, Jan
Author_Institution :
Chalmers Univ. of Technol., Goteborg
Abstract :
A comparison between lattice matched (lm) and pseudomorphic HEMTs (pHEMTs) aimed for cryogenically cooled low-noise amplifiers (LNAs) has been performed. The DC and RF performance of the HEMTs at room temperature (RT) has been investigated. The devices have been tested in a hybrid 4 - 8 GHz LNA. While the gain and noise were superior for the pHEMT compared with the lm HEMT at RT, the noise performance was slightly inferior for the pHEMT when cooled to 20 K. The gain was still higher for the pHEMT at 20 K.
Keywords :
cryogenic electronics; high electron mobility transistors; low noise amplifiers; cryogenically cooled low-noise amplifiers; frequency 4 GHz to 8 GHz; lattice matched InP HEMT; pseudomorphic HEMT; temperature 20 K; HEMTs; Indium phosphide; Lattices; Low-noise amplifiers; MODFETs; PHEMTs; Performance gain; Radio frequency; Radiofrequency amplifiers; Temperature; HEMT; InP; LNA; cryogenic temperatures; lattice matched; noise temperature; pseudomorphic;
Conference_Titel :
Microwave Conference, 2006. APMC 2006. Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-4-902339-08-6
Electronic_ISBN :
978-4-902339-11-6
DOI :
10.1109/APMC.2006.4429403
