Title :
Large-signal modelling and comparison of AlGaN/GaN HEMTs and SiC MESFETs
Author :
Angelov, I. ; Andersson, K. ; Schreurs, D. ; Xiao, D. ; Rorsman, N. ; Desmaris, V. ; Sudow, M. ; Zirath, H.
Author_Institution :
Chalmers Univ. of Technol., Gothenburg
Abstract :
The Large Signal (LS) model for GaN and SiC FET devices was developed and evaluated with DC, S, and LS measurements. Special attention was paid to improve the management of harmonics and to provide a more physical treatment of the dispersion. The model was implemented in a commercial CAD tool and exhibits good overall accuracy.
Keywords :
Schottky gate field effect transistors; aluminium compounds; gallium compounds; high electron mobility transistors; silicon compounds; wide band gap semiconductors; AlGaN-GaN; HEMT; MESFET; SiC; commercial CAD tool; dispersion; harmonics management; Aluminum gallium nitride; Etching; FETs; Frequency; Gallium nitride; HEMTs; MESFETs; MODFETs; Power generation; Silicon carbide; FET; Transistor Models;
Conference_Titel :
Microwave Conference, 2006. APMC 2006. Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-4-902339-08-6
Electronic_ISBN :
978-4-902339-11-6
DOI :
10.1109/APMC.2006.4429422
