DocumentCode :
2758368
Title :
Coupled electrothermal and electromagnetic modeling, simulation and design of RF and microwave power FETs
Author :
Snowden, Christopher M.
fYear :
2006
fDate :
12-15 Dec. 2006
Firstpage :
295
Lastpage :
304
Abstract :
The design and modeling of power FETs for microwave power amplifiers is described, based on physical and equivalent circuit models coupled to electro-thermal and electromagnetic simulations. The results from this work reveal complex behavior in large high frequency power devices and facilitate the design of very high power, high efficiency transistors. This approach allows the maximizing of power added efficiency and assists in optimizing the thermal management and circuit design.
Keywords :
equivalent circuits; microwave power amplifiers; microwave transistors; circuit design; coupled electrothermal-electromagnetic modeling; equivalent circuit models; high efficiency transistors; microwave power amplifiers; thermal management; Circuit simulation; Coupling circuits; Electromagnetic coupling; Electromagnetic modeling; Electrothermal effects; FETs; Microwave amplifiers; Microwave devices; Radio frequency; Thermal management; Power transistors; design; microwave power FET; pHEMT; physical modeling; power amplifiers; simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2006. APMC 2006. Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-4-902339-08-6
Electronic_ISBN :
978-4-902339-11-6
Type :
conf
DOI :
10.1109/APMC.2006.4429426
Filename :
4429426
Link To Document :
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