• DocumentCode
    2758413
  • Title

    Improved high-temperature operation of InGaAs/AlGaAs high-power quantum well lasers by short-period superlattice barriers

  • Author

    Wiedmann, N. ; Jandeleit, J. ; Ikulla, M. ; Kiefer, R. ; Bihlmann, G. ; Poprawe, R. ; Weimann, G.

  • Author_Institution
    Fraunhofer-Inst. fur Lasertech., Aachen, Germany
  • Volume
    2
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    514
  • Abstract
    The electrooptic characteristics, like threshold current Ith and differential quantum efficiency ηd, of lnGaAs/AlGaAs quantum well lasers generally degrade with rising operating temperature. To ensure high output power and long lifetime, high power diode laser bars are actively cooled by microchannel heat sinks. If the strong temperature dependence of the electrooptic characteristics was reduced, the same output power could be reached using passive cooling. We have demonstrated a short-period superlattice (SSL) large optical cavity (LOC) SQW laser with a very high characteristic temperature T0 above 300 K which is almost twice as much as for a standard LOC laser. We also showed that the main factor which deteriorates the differential quantum efficiency ηd, with temperature is the drop of the internal quantum efficiency ηt and not an increase of the internal loss as often supposed. The introduction of the SSL layer has increased the differential series resistance by a factor of about 1.5 which leads to a slight reduction in the maximum wallplug efficiency
  • Keywords
    III-V semiconductors; aluminium compounds; electro-optical effects; gallium arsenide; heat sinks; indium compounds; laser beams; laser cavity resonators; laser cooling; quantum well lasers; semiconductor superlattices; 300 K; 980 nm; InGaAs-AlGaAs; InGaAs/AlGaAs; characteristic temperature; differential quantum efficiency; differential series resistance; electrooptic characteristics; high power diode laser bars; high-power quantum well lasers; high-temperature operation; internal loss; internal quantum efficiency; lifetime; lnGaAs/AlGaAs quantum well lasers; maximum wallplug efficiency; microchannel heat sinks; operating temperature; output power; passive cooling; short-period superlattice barriers; short-period superlattice large optical cavity SQW laser; temperature dependence; threshold current; Degradation; Diode lasers; Indium gallium arsenide; Lab-on-a-chip; Lasers and electrooptics; Power generation; Quantum well lasers; Temperature; Threshold current; Time of arrival estimation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
  • Conference_Location
    Rio Grande
  • ISSN
    1092-8081
  • Print_ISBN
    0-7803-5947-X
  • Type

    conf

  • DOI
    10.1109/LEOS.2000.893940
  • Filename
    893940