Title :
Profile engineering for sub-micron CMOS using high energy ion implantation
Author :
Stolmeijer, A. ; Pitt, M. ; Blanken, H. Den ; Van Der Plas, P. ; de Werdt, R.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
An improved implantation scheme has been developed for a submicron retrograde twin-well CMOS (complementary metal-oxide-semiconductor) process. A blanket p-well implantation is used to avoid one photoresist step. The use of a phosphorus compensating implantation for PMOS (p-channel MOS) transistor threshold voltage control avoids another resist step and photoresist processing on gate oxide. The latter results in an improved gate oxide integrity. The new implantation scheme has been successfully employed in the fabrication of a 1-Mb SRAM (static random-access memory) on 150-mm wafers
Keywords :
CMOS integrated circuits; doping profiles; integrated circuit technology; integrated memory circuits; ion implantation; random-access storage; 1 Mbit; PMOS transistor threshold voltage control; SRAM; Si:P; blanket p-well implantation; gate oxide integrity; high energy ion implantation; profile engineering; static random-access memory; submicron retrograde twin-well CMOS; Boron; CMOS process; Implants; Impurities; Ion implantation; MOSFETs; Power engineering and energy; Random access memory; Resists; Threshold voltage;
Conference_Titel :
VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/VTSA.1989.68637
