Title :
1.5V 5 GHz low noise amplifier with source degeneration
Author :
Hsu, Meng-Ting ; Chih, Ting-Yueh ; Li, Guo-Rui
Author_Institution :
Nat. Yunlin Univ. of Sci. & Technol., Yunlin
Abstract :
A 5 GHz Low noise amplifier (LNA) has been implemented in a standard 0.18 um 1P6M Mixed-Mode CMOS process. At 5 GHz, this LNA provides about lOdB gain. Noise figure of LNA is 2.8 dB while drawing 10 mW from a 1.5 V supply. A fully integrated low noise amplifier with technique of source inductive feed-back achieves the goal of low noise and low power dissipation for 5 GHz wireless applications. The quality factor and inductance value of source inductor is also addressed in the measurement. This paper also describes how to use technique with wire-bonding to obtain impedance matching.
Keywords :
CMOS integrated circuits; Q-factor; impedance matching; lead bonding; low noise amplifiers; microwave amplifiers; mixed analogue-digital integrated circuits; frequency 5 GHz; impedance matching; integrated low noise amplifier; low noise amplifier; mixed-mode CMOS process; power dissipation; quality factor; source degeneration; source inductive feedback; source inductor; voltage 1.5 V; wire-bonding; wireless applications; CMOS technology; Filters; Frequency; Impedance matching; Inductors; Integrated circuit noise; Low-noise amplifiers; Noise figure; Transmission line measurements; Wavelength measurement; CMOS LNA; low noise; low power; source inductive feedback(SIF);
Conference_Titel :
Microwave Conference, 2006. APMC 2006. Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-4-902339-08-6
Electronic_ISBN :
978-4-902339-11-6
DOI :
10.1109/APMC.2006.4429449
