Title :
High speed and precise ablation etching of wide band gap GaN semiconductor using high-intensity femtosecond laser
Author :
Ozono, Kazue ; Obara, Minioiu ; Usui, Akira ; Sunakawa, Haruo
Author_Institution :
Fac. of Sci. & Technol., Keio Univ., Yokohama, Japan
Abstract :
We report on the demonstration of precise and high-speed ablation etching of GaN films using high-intensity femtosecond laser at 800 nm. This ablation etching process is based on the two-photon absorption process of the GaN. It is found that there is no Ga layer formation on the ablated surface of the GaN
Keywords :
III-V semiconductors; gallium compounds; pulsed laser deposition; semiconductor thin films; sputter etching; two-photon processes; 800 nm; GaN; GaN films; ablated surface; ablation etching process; high-intensity femtosecond laser; precise ablation etching; two-photon absorption process; wide band gap GaN semiconductor; Absorption; Dry etching; Gallium nitride; Laser ablation; Laser theory; Optical pulses; Surface emitting lasers; Ultrafast electronics; Wideband; X-ray lasers;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.893965
