Numerical investigation on thermal characteristics of GaN HFETs for high power applications

Author

Xu, Jianfeng ; Yin, Wen-Yan ; Mao, Junfa

Author_Institution

Shanghai Jiao Tong Univ., Shanghai

fYear

2006

fDate

12-15 Dec. 2006

Firstpage

433

Lastpage

436

Abstract

In this paper, numerical investigation on GaN HFETs is carried out using hybrid finite element method (FEM) which combines the FEM with the preconditioned conjugated gradient technique. The maximum temperatures of the HFETs operating under continuous-waves (CW) and pulsed-waves (PW) are both captured accurately. The effects of temperature- dependent thermal conductivities of the materials on the temperature distribution are also studied and compared for different substrate materials, such as sapphire, silicon, and SiC.

Keywords

III-V semiconductors; conjugate gradient methods; finite element analysis; gallium compounds; power HEMT; temperature distribution; thermal conductivity; wide band gap semiconductors; FEM; GaN; HFET; continuous-waves; high power applications; hybrid finite element method; numerical investigation; preconditioned conjugated gradient technique; pulsed-waves; temperature distribution; thermal characteristics; thermal conductivity effects; Aluminum gallium nitride; Conducting materials; Gallium nitride; HEMTs; MODFETs; Microwave theory and techniques; Silicon carbide; Temperature distribution; Thermal conductivity; Transient analysis; GaN HFETs; hybrid FEM; maximum temperature; power density; temperature distribution; thermal characteristics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. APMC 2006. Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-4-902339-08-6

Electronic_ISBN

978-4-902339-11-6

Type

conf

DOI

10.1109/APMC.2006.4429456

Filename

4429456