Title :
Using Quadded logic in nanoPLAs to aggressively increase circuit yield
Author :
Niknahad, Mahtab ; Sander, Oliver ; Carro, Luigi ; Azambuja, Jose Rodrigo ; Becker, Juergen ; Kastensmid, Fernanda Lima
Author_Institution :
Inst. for Inf. Process. Technol. (ITIV), Karlsruhe Inst. of Technol. (KIT), Karlsruhe, Germany
Abstract :
Because of the stochastic assembly, nano Programmable Logic Arrays (nanoPLAs) are currently built with a costly test and characterization process. In this paper, we focus on design oriented defect tolerance instead of Physical oriented one, and propose a reliable implementation for nano devices. Our new methodology is based on Quadded NOR logic, which guarantees the circuit function for all single defects and almost all multiple ones. Under Quadded form of design we transfer the costly test and characterization phase in fabrication process of the nanoPLA to a reliable logic design. We use the wrapping feature of nanoPLAs and reduce the overhead of Quadded method on logics in nanoPLA. This feature allows implementation of quadruplicated logic on a nanoPLA by using spared nanowires. This allows design with a very small area overhead. Results show about 100 percent availability of Quadded logic XOR gate implemented on nanoPLAs.
Keywords :
NOR circuits; integrated circuit yield; logic design; logic gates; nanoelectronics; nanowires; programmable logic arrays; Quadded NOR logic; Quadded logic XOR gate; Quadded method; characterization process; circuit function; circuit yield; costly test; design oriented defect tolerance; fabrication process; logic design; nanoPLA; nanodevices; nanoprogrammable logic arrays; physical oriented defect tolerance; quadruplicated logic; spared nanowires; stochastic assembly; wrapping feature; Logic gates; Reliability; Defect Tolerance Techniques; Nano Architectures; Quadded Logic; nanoPLA;
Conference_Titel :
Nano, Information Technology and Reliability (NASNIT), 2011 15th North-East Asia Symposium on
Conference_Location :
Macao
Print_ISBN :
978-1-4577-0793-3
DOI :
10.1109/NASNIT.2011.6111143