Theoretical study of AC photothermal response of semiconductor p-n junction devices [solar cells]

Author

Zhang, Shu-yi ; Cheng, Jian-Chun

Author_Institution

Lab. of Photoacoust. Sci., Nanjing Univ., China

fYear

1990

fDate

4-7 Dec 1990

Firstpage

667

Abstract

A theoretical study of AC photothermal responses of semiconductor p-n junction devices in the photogenerated (or applied) voltage is presented. It covers the entire set of optical, electronic, thermal, and geometric parameters involved in the operation of conventional p-n junction devices. The coupling between DC and AC components of the time-dependent transport equations of the minority carriers is considered in the theoretical analyses, and the thermalization due to the minority carriers across the space-charge region is taken into account

Keywords

minority carriers; p-n junctions; photothermal effects; semiconductor device models; solar cells; AC photothermal response; electronic parameters; geometric parameters; minority carriers; optical parameters; photogenerated voltage; semiconductor p-n junction devices; solar cells; space-charge region; thermal parameters; thermalization; time-dependent transport equations; Charge carrier processes; Equations; Optical devices; Optical modulation; Optical sensors; P-n junctions; Photovoltaic cells; Radiative recombination; Thyristors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1990. Proceedings., IEEE 1990

Conference_Location

Honolulu, HI

Type

conf

DOI

10.1109/ULTSYM.1990.171447

Filename

171447