Development of thin film resistor and abrasion protective layer for thermal printing head

Author

Kuramasu, Keizaburo ; Korechika, Tetsuhiro ; Tomioka, Tatsuyuki ; Kitagawa, Makoto ; Hira, Takashi

Author_Institution

Matsushita Electron. Components Co. Ltd., Osaka, Japan

fYear

1989

fDate

26-28 Apr 1989

Firstpage

168

Lastpage

171

Abstract

A double-layer resistor formed by RF sputtering and an abrasion protective layer formed by the plasma CVD (chemical vapor deposition) method are described. The Si/(Ti-C-Si-O) double layer resistor has high resistivity, low temperature coefficient of resistance (TCR), and high resistance to thermal oxidation. The SiON abrasion protective layer formed by the plasma CVD method using an SiH₄-N₂N ₂O gas mixture at temperatures above 350°C has high microhardness, high thermal durability and high productivity. A highly reliable, highly productive, high-resistance thermal printing head was realized using these materials. Its experimentally determined characteristics are reported

Keywords

CVD coatings; hardness; protective coatings; sputtered coatings; thermal printers; thin film resistors; RF sputtering; Si-TiCSiO; SiON; abrasion protective layer; double-layer resistor; microhardness; plasma CVD; resistivity; temperature coefficient of resistance; thermal durability; thermal oxidation; thermal printing head; thin film resistor; Chemical vapor deposition; Conductivity; Plasma chemistry; Plasma temperature; Protection; Radio frequency; Resistors; Sputtering; Thermal resistance; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Manufacturing Technology Symposium, 1989, Proceedings. Japan IEMT Symposium, Sixth IEEE/CHMT International

Conference_Location

Nara

Type

conf

DOI

10.1109/IEMTS.1989.76131

Filename

76131