Silicon carbide inverter with two series Z-networks

Author

Rabkowski, Jacek ; Zdanowski, Mariusz ; Barlik, Roman

Author_Institution

Inst. of Control & Ind. Electron., Warsaw Univ. of Technol., Warsaw, Poland

fYear

2011

fDate

27-30 June 2011

Firstpage

372

Lastpage

377

Abstract

The paper presents a concept of the three-phase DC/AC inverter with two impedance networks connected in series (2×Z) built with only Silicon Carbide power devices. Authors describe features of the novel inverter with special attention on serious reduction of voltages on applied Z-network capacitors. Benefits from application of SiC devices: JFETs and Schottky diodes are also discussed. Design and construction of the 2kVA/3×400V RMS laboratory model is shown. Finally, authors prove concept by simulation and experimental tests at 100kHz switching frequency.

Keywords

Schottky diodes; invertors; junction gate field effect transistors; power capacitors; silicon compounds; wide band gap semiconductors; JFET; RMS laboratory model; Schottky diode; SiC; Z-network capacitor; apparent power 2 kVA; frequency 100 kHz; impedance network; switching frequency; three-phase DC-AC inverter; voltage 400 V; voltage reduction; Capacitors; Inductors; Inverters; JFETs; Schottky diodes; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics (ISIE), 2011 IEEE International Symposium on

Conference_Location

Gdansk

ISSN

Pending

Print_ISBN

978-1-4244-9310-4

Electronic_ISBN

Pending

Type

conf

DOI

10.1109/ISIE.2011.5984187

Filename

5984187