Depth profiling in piezoelectric photoacoustic imaging: theory and experiment

Author

Shen, Yao-chun ; Zhang, Shu-yi ; Lu, Yue-sheng ; Zhang, Bu-fa

Author_Institution

Lab. of Photoacoust. Sci., Nanjing Univ., China

fYear

1990

fDate

4-7 Dec 1990

Firstpage

671

Abstract

The depth profiling of piezoelectric photoacoustic (PA) imaging is studied experimentally and theoretically. In the experiment, the PA signals and the layered PA images of semiconductor materials and devices are obtained by adjusting the phase shift. In order to explain the experimental results, a one-dimensional multilayered model with discontinuous thermal impedance between the neighboring layers is used, and expressions for the thermal and acoustic fields in the sample and PZT transducer are presented. Numerical calculations in agreement with practical experimental conditions have been carried out

Keywords

acoustic field; acoustic imaging; photoacoustic effect; piezoelectric devices; semiconductor device testing; ultrasonic applications; PZT transducer; PbZrO3TiO3; acoustic fields; depth profiling; discontinuous thermal impedance; numerical calculations; one-dimensional multilayered model; piezoelectric photoacoustic imaging; semiconductor devices; semiconductor materials; thermal fields; Acoustic devices; Acoustic imaging; Acoustic transducers; Electromagnetic modeling; Image analysis; Impedance; Photothermal effects; Piezoelectric transducers; Semiconductor materials; Surface waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1990. Proceedings., IEEE 1990

Conference_Location

Honolulu, HI

Type

conf

DOI

10.1109/ULTSYM.1990.171448

Filename

171448