Towards reduced threshold voltages for vertical power Mosfet transistors

The threshold voltage of insulated gate power transistors usually is around 3 to 4V and their nominal gate to source voltage between 15 and 20V. These unanimously recognized electrical characteristics are questioned in this paper in order to evaluate which benefits could be drawn from a reduction of the threshold voltage of power transistors. Logic level MOSFETs already exist, but this paper chooses to study theoretically the electrical and physical characteristics of power transistors as a function of the threshold voltage to see if these electrical values of power electronics standards are still appropriate. It appears that the reduction of the threshold voltage of power MOSFET reduces the amount of control power and may improve switching characteristics.