Removing S-parameters on-wafer measurements parasitic elements using time domain gating: Application to transmission lines

Author

Abessolo-Bidzo, Dolphin ; Poirier, P. ; Descamps, Philippe ; Hubert, Olivier

Author_Institution

NXP Semicond., Caen

fYear

2006

fDate

12-15 Dec. 2006

Firstpage

575

Lastpage

578

Abstract

This paper presents experimental results of removing on-wafer microwave measurements parasitic elements due to RF probes pads and interconnects using Time Domain Gating method up to 110GHz. This approach has been tested on transmission lines processed using metallization layers of NXP RF BiCMOS technology and compared with the classical OPEN/SHORT de-embedding method. The limitations and the ways to improve this technique are shown.

Keywords

BiCMOS integrated circuits; microwave measurement; probes; transmission lines; RF BiCMOS technology; RF probes pads; Time Domain Gating method; classical OPEN/SHORT de-embedding method; time domain gating; transmission lines; wafer measurements parasitic elements; BiCMOS integrated circuits; Metallization; Microwave measurements; Microwave theory and techniques; Probes; Radio frequency; Scattering parameters; Testing; Time measurement; Transmission line measurements; S-parameters de-embedding procedure; Time domain gating; coplanar waveguides; on-wafer RF measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. APMC 2006. Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-4-902339-08-6

Electronic_ISBN

978-4-902339-11-6

Type

conf

DOI

10.1109/APMC.2006.4429491

Filename

4429491