Title :
InGaN laser diodes on SiC substrates
Author :
Kuramata, Akito ; Kubota, Shin-ichi ; Soejima, Reiko ; Domen, Kay ; Horino, Kazuhiko ; Tanahashi, Toshiyuki
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Due to the difficulty in making large, high-quality bulk GaN crystals, the selection of a substrate for InGaN laser diodes is still an important problem to be considered. We have reported that SiC is very attractive for the reasons concerning cleavage, thermal and electrical conductivity. In this paper, we introduce the latest characteristics of InGaN laser diodes fabricated on SiC substrates. We also show that the high thermal conductivity of SiC effectively facilitates the heat dissipation from the devices
Keywords :
III-V semiconductors; MOCVD; current density; gallium compounds; indium compounds; quantum well lasers; vapour phase epitaxial growth; wide band gap semiconductors; InGaN; MQW active layer; SCH structure; SiC; heat dissipation; high thermal conductivity; high-quality crystals; laser diodes; low pressure MOVPE; substrate selection; Costs; Current measurement; Diodes; Electrons; Power generation; Production; Resistance heating; Silicon carbide; Temperature; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.894009
