DocumentCode :
2759657
Title :
Characterization of dielectric properties for PZN-PMNPT ferroelectric thin films at microwave frequencies
Author :
Wong, H.M. ; Luo, B. ; Ong, L.C. ; Yao, K. ; Guo, Y.X.
Author_Institution :
Nanyang Technol. Univ., Singapore
fYear :
2006
fDate :
12-15 Dec. 2006
Firstpage :
579
Lastpage :
582
Abstract :
Dielectric properties of pseudo-epitaxial perovskite ferroelectric PZN-PMN-PT thin films deposited on lanthanum aluminate (LAO) substrates were characterized for microwave application. Dielectric constant, voltage tunability, and loss tangent of the thin films were determined via coplanar waveguides (CPWs) and interdigital capacitors (IDCs) structures. Scattering parameters were extracted through measurements for both structures and the dielectric properties were obtained by the conformal mapping method (CMM) and partial capacitance techniques (PCT). A tunability of between 0.5% to 3% at 25 V was obtained at 30 MHz to 3 GHz.
Keywords :
conformal mapping; coplanar waveguides; ferroelectric thin films; lanthanum compounds; permittivity; PZN-PMN-PT ferroelectric thin films; conformal mapping method; coplanar waveguides; dielectric constant; interdigital capacitors; lanthanum aluminate; loss tangent; microwave frequencies; partial capacitance technique; voltage tunability; Coplanar waveguides; Dielectric constant; Dielectric losses; Dielectric substrates; Dielectric thin films; Ferroelectric materials; Lanthanum; Microwave frequencies; Sputtering; Voltage; Coplanar waveguides; dielectric constant; ferroelectric thin films; interdigital capacitors; loss tangent; partial capacitance technique; voltage tunability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2006. APMC 2006. Asia-Pacific
Conference_Location :
Yokohama
Print_ISBN :
978-4-902339-08-6
Electronic_ISBN :
978-4-902339-11-6
Type :
conf
DOI :
10.1109/APMC.2006.4429492
Filename :
4429492
Link To Document :
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