DocumentCode :
2759765
Title :
A 3.1–10.6 GHz frequency tunable ultra wideband LNA
Author :
Sung, Guo-Ming ; Hsu, Chia-Yu ; Shen, Chiu-Lung
Author_Institution :
Dept. of Electr. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan
fYear :
2011
fDate :
19-20 July 2011
Firstpage :
37
Lastpage :
41
Abstract :
This paper presents an ultra-wideband (UWB) low noise amplifier (LNA) which is implemented with TSMC 0.18-μm CMOS process. In the proposed chip, both shunt-series feedback and bandpass filter are used to complete the input matching of the desired ultra broadband chip; and that the power consumption is reduced using the current reused method. Besides, not only the isolation of LNA is improved with a cascade amplifier, but also the output matching is achieved with buffer. Finally, a multiple gated circuit is added to improve the linearity. The simulation results of the proposed UWB LNA shows that the isolation, input return loss, output return loss, power consumption are -83 dB, -12.3 dB, -11.1 dB, and 12.2 mW, respectively; and that the power gain from 11.5 dB to 13.4 dB, gain flatness of 0.245, and noise figure from 3.8 dB to 4.7 dB are obtained at frequency bandwidth from 3.1 GHz to 10.6 GHz. Notify that the simulated P1dB and IIP3 are -11.25 dBm and -13.28 dBm, respectively, at frequency of 6 GHz.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; band-pass filters; field effect MMIC; low noise amplifiers; microwave filters; ultra wideband technology; TSMC CMOS process; UWB low noise amplifier; bandpass filter; bandwidth 3.1 GHz to 10.6 GHz; cascade amplifier; current reused method; frequency 6 GHz; frequency tunable ultra wideband LNA; gain 11.5 dB to 13.4 dB; loss -11.1 dB; loss -12.3 dB; loss -83 dB; multiple gated circuit; noise figure 3.8 dB to 4.7 dB; power 12.2 mW; power consumption; shunt-series feedback filter; size 0.18 mum; ultra broadband chip matching; Band pass filters; Bandwidth; Gain; Impedance matching; Logic gates; Power demand; Ultra wideband technology; Ultra wideband system; current reused; low noise amplifier; multiple gated circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quality Electronic Design (ASQED), 2011 3rd Asia Symposium on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4577-0145-0
Type :
conf
DOI :
10.1109/ASQED.2011.6111699
Filename :
6111699
Link To Document :
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