High-efficiency GaN/AlGaN HEMT oscillator operating at L-band

Author

Shin Kim, Jae ; Wu, Wenhsing ; Lin, Jenshan ; Verma, Ashok ; Jang, Soohwan ; Ren, Fan ; Pearton, Stephen ; Fitch, Robert ; Gillespie, James

Author_Institution

Univ. of Florida, Gainesville

fYear

2006

fDate

12-15 Dec. 2006

Firstpage

631

Lastpage

634

Abstract

This paper presents a new design method to implement the high efficiency oscillator based on the AlGaN/GaN HEMT for the wireless power transmission (WPT) system. The oscillator has been developed with Se₂O₃-passivated AlGaN/GaN HEMT and has achieved the maximum efficiency of 40.5% and the maximum output power of 23 dBm for WPT applications. With both the high output power of the circuit and inherent device material advantages, the phase noise performances of -97 dBc/Hz and -125 dBc/Hz at offsets of 100 kHz and 1 MHz, respectively, have been achieved. To our knowledge, the achieved efficiency is the highest ever reported for a GaN oscillator.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; radiofrequency oscillators; wide band gap semiconductors; GaN-AlGaN; HEMT oscillator; WPT system; efficiency 40.5 percent; high efficiency oscillator; wireless power transmission; Aluminum gallium nitride; Circuits; Design methodology; Gallium nitride; HEMTs; L-band; Oscillators; Phase noise; Power generation; Power transmission; HEMT; High Efficiency; High Power; Oscillator; Power Amplifiers; Resonator; S parameter;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. APMC 2006. Asia-Pacific

Conference_Location

Yokohama

Print_ISBN

978-4-902339-08-6

Electronic_ISBN

978-4-902339-11-6

Type

conf

DOI

10.1109/APMC.2006.4429500

Filename

4429500