• DocumentCode
    2759861
  • Title

    Near-threshold 40nm Supply Feedback C-element

  • Author

    Schwartz, Idan ; Teman, Adam ; Dobkin, Rostislav Reuven ; Fish, Alexander

  • Author_Institution
    Low Power Circuits & Syst. Lab., Ben-Gurion Univ. of The Negev, Negev, Israel
  • fYear
    2011
  • fDate
    19-20 July 2011
  • Firstpage
    74
  • Lastpage
    78
  • Abstract
    The growing demand for ultra low power applications has drawn interest in low voltage digital circuits, operating in the near-threshold region. Asynchronous circuits, operating with near-threshold supply voltages, are more attractive than their synchronous counterparts due to higher resilience to PVT variations. This paper presents a novel ultra-low power C-element, which is a basic building block in common asynchronous circuits. The proposed C-element is based on a Supply Feedback concept, implemented in a cross-coupled inverter latch. Utilization of this concept enables functionality under local and global variations down to 0.3V. The cell was designed using a standard low-power 40nm technology. Simulation results show a 5.8X-24X leakage reduction at 300mV as compared to a conventional Weak Feedback C-element operating at its minimal VDD. Monte Carlo simulations prove that the proposed cell remains fully functional under global and local process variations.
  • Keywords
    Monte Carlo methods; asynchronous circuits; flip-flops; leakage currents; low-power electronics; Monte Carlo simulations; PVT variations; asynchronous circuits; conventional weak feedback C-element; cross-coupled inverter latch; leakage reduction; low voltage digital circuits; near-threshold region; near-threshold supply feedback C-element; near-threshold supply voltages; standard low-power technology; ultra low power applications; ultra-low power C-element; Asynchronous circuits; Delay; Inverters; Latches; Logic gates; Low voltage; Transistors; Asynchronous; C-element; Near-threshold;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quality Electronic Design (ASQED), 2011 3rd Asia Symposium on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4577-0145-0
  • Type

    conf

  • DOI
    10.1109/ASQED.2011.6111705
  • Filename
    6111705