Title :
Measurement and analysis of thermal stresses in 3-D integrated structures containing through-silicon-vias
Author :
Jiang, Tengfei ; Ryu, Suk-Kyu ; Zhao, Qiu ; Im, Jay ; Son, Ho-Young ; Byun, Kwang-Yoo ; Huang, Rui ; Ho, Paul S.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas, Austin, TX, USA
Abstract :
In this work, experimental measurements and numerical analysis of the thermal stresses in TSV structures are presented. The stresses are measured using the micro-Raman spectroscopy and the precision bending beam technique. Together, the two methods provide a complementary approach for characterizing thermomechanical behaviors of the TSV structures. The effect of plasticity on the stresses is discussed, and the measured stress behavior is used to analyze the keep-out zone (KOZ) for active devices near the TSVs.
Keywords :
Raman spectra; integrated circuit measurement; thermal stresses; three-dimensional integrated circuits; 3D integrated structures; KOZ; Si; TSV structures; active devices; keep-out zone analysis; microRaman spectroscopy; numerical analysis; plasticity effect; precision bending beam technique; thermal stress measurement; thermomechanical behaviors; through-silicon-vias; Semiconductor device measurement; Silicon; Stress; Stress measurement; Temperature measurement; Thermal stresses; Through-silicon vias;
Conference_Titel :
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1138-0
Electronic_ISBN :
pending
DOI :
10.1109/IITC.2012.6251570
