Quantum well intermixing technologies for quasi-phase-matching gratings

Author

Helmy, A.Saher ; Hutchings, D.C. ; Kleckner, T.C. ; Aitchison, J.S. ; Bryce, A.C. ; Marsh, J.H. ; Martin, P. ; Landesman, J.P. ; Brown, C.T.A. ; Moutzouris, K. ; Ebrahimzadeh, M. ; Ayling, S.G.

Author_Institution

Electron. & Electr. Eng., Univ. of Glasgow, UK

Volume

2

fYear

2000

fDate

2000

Firstpage

712

Abstract

Most of the studies carried out to date on the spatial selectively of the quantum well intermixing process have involved characterising either large intermixed areas, or sub 1 μm features for 1D and 0D confinement potentials. Features that lie in the range of 1-10 μm are of interest because they can be used to realise various devices such as waveguides, and domain disordering for quasi-phase matching (QPM). In this paper different technologies were investigated to fabricate QPM gratings in GaAs/AlAs superlattice waveguides

Keywords

III-V semiconductors; aluminium compounds; diffraction gratings; gallium arsenide; optical phase matching; optical waveguides; semiconductor quantum wells; semiconductor superlattices; GaAs-AlAs; GaAs/AlAs superlattice waveguide; domain disordering; fabrication; quantum well intermixing; quasi-phase-matching grating; Area measurement; Chemical technology; Chemical vapor deposition; Frequency conversion; Gallium arsenide; Gratings; Plasma chemistry; Plasma waves; Stress measurement; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE

Conference_Location

Rio Grande

ISSN

1092-8081

Print_ISBN

0-7803-5947-X

Type

conf

DOI

10.1109/LEOS.2000.894052

Filename

894052