• DocumentCode
    2760139
  • Title

    Integration of a low-k organic polymer material (k=2.3) for reducing both resistance and capacitance

  • Author

    Hirai, Mihoko ; Akiyama, Yoshihito ; Koga, Kazuhiro ; Kawakami, Hiroshi ; Nakatani, Koji ; Tada, Masahiro

  • Author_Institution
    Consortium for Adv. Semicond. Mater. & Related Technol. (CASMAT) Kokubunji, Kokubunji, Japan
  • fYear
    2012
  • fDate
    4-6 June 2012
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We demonstrated an integration of a non-progen organic polymer (k=2.3) developed by Sumitomo Bakelite Co. Ltd. H2/He plasma damage recovery process which was developed for organic materials achieved 5% capacitance reduction with keeping enough TDDB reliability. The mechanism was presumed by chemical analysis. Moreover, the TDDB lifetime was not degraded even without a barrier metal, indicating this polymer could enable resistance reduction for its Cu diffusion barrier performance. This polymer would reduce both resistance and capacitance.
  • Keywords
    capacitance; chemical analysis; electric resistance; polymers; reliability; Cu; TDDB lifetime; barrier metal; capacitance reduction; chemical analysis; diffusion barrier performance; low-k organic polymer material; nonprogen organic polymer; organic materials; plasma damage recovery process; reliability; resistance reduction; Capacitance; Etching; Films; Helium; Metals; Plasmas; Polymers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference (IITC), 2012 IEEE International
  • Conference_Location
    San Jose, CA
  • ISSN
    pending
  • Print_ISBN
    978-1-4673-1138-0
  • Electronic_ISBN
    pending
  • Type

    conf

  • DOI
    10.1109/IITC.2012.6251579
  • Filename
    6251579