IR drop analysis in single- and multi-wall carbon nanotube power interconnects in sub-nanometer designs

This paper presents a detailed analysis of the power supply voltage (IR) drop in sub-nanometer designs for local, semi-global, and global lengths. The IR drop in carbon nanotube (CNT) based power interconnects is analyzed and their effects on the timing delay have been investigated. It is shown that the CNT based power interconnects have significantly less IR-drop in comparison to that of Cu based power interconnects for semi-global and global lengths. The interconnect delay is increased by almost ten times for ten fold increase in interconnect length due to IR-drop in Cu wires, whereas that of MWCNT based wires is only ~50% for global lengths.