Title :
Single-transverse mode and stable-polarization operation of GaInAs/GaAs vertical-cavity surface-emitting laser array on GaAs (311)B
Author :
Arai, Masakazu ; Nishiyama, Nobuhiko ; Shinada, Satoshi ; Matsutani, Akihiro ; Koyama, Fumio ; Iga, Kenichi
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Japan
Abstract :
In this study, we demonstrate 960 nm single-mode VCSEL arrays grown on a GaAs (311)B substrate. All the devices in a 3×3 array exhibited single-transverse-mode and stable-polarization operation in an entire injection current range. Moreover, we investigated the dynamic characteristics such as time-resolved orthogonal polarization suppression ratio (OPSR) and 2.5 Gbit/s NRZ through a multi-mode fiber data transmission
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; laser stability; light polarisation; semiconductor laser arrays; surface emitting lasers; 2.5 Gbit/s; 960 nm; GaAs; GaAs (311)B substrate; GaInAs-GaAs; GaInAs/GaAs vertical cavity surface emitting laser array; NRZ; current injection; dynamic characteristics; multi-mode fiber data transmission; single transverse mode operation; stable polarization operation; time-resolved orthogonal polarization suppression ratio; Gallium arsenide; Optical fiber polarization; Optical polarization; Oxidation; Threshold voltage; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE
Conference_Location :
Rio Grande
Print_ISBN :
0-7803-5947-X
DOI :
10.1109/LEOS.2000.894060
