DocumentCode :
2760251
Title :
3D TSV and interposer
Author :
Fraunhofer, J.W.
Author_Institution :
IZM - ASSID, Dresden, Germany
fYear :
2012
fDate :
4-6 June 2012
Firstpage :
1
Lastpage :
1
Abstract :
3D System Integration is one of the most significant strategic key technologies in the field of microelectronic packaging and System integration. Besides the progress in silicon technology following “Moore´s law” there is an increasing demand for highly miniaturized complex system architectures which are based on 3D SiPs. Currently different approaches are in development, which will result in complex 3D stacking approaches using TSV technology. Silicon interposer with TSV are one important element to combine different advanced devices into one miniaturized system with high functionality. The main target today is to achieve cost reduction in TSV processing and stack assembly. But nevertheless 3D WL approaches technology is one of the main technology drivers in packaging and system integration. The presentation will highlight same major aspects and current status of this technology.
Keywords :
integrated circuit interconnections; system-in-package; three-dimensional integrated circuits; 3D SiP; 3D TSV; 3D stacking; 3D system integration; Moore law; cost reduction; microelectronic packaging; silicon interposer; stack assembly; system-in-package; through silicon via; Assembly; Microelectronics; Packaging; Silicon; Stacking; Through-silicon vias;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location :
San Jose, CA
ISSN :
pending
Print_ISBN :
978-1-4673-1138-0
Electronic_ISBN :
pending
Type :
conf
DOI :
10.1109/IITC.2012.6251585
Filename :
6251585
Link To Document :
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