Enhanced synthesis method to prepare crystalline GaAs nanowires with high growth yield

Author

Han, Ning ; Wang, Fengyun ; Hui, Alvin T. ; Hou, Jared J. ; Shan, Guangcun ; Xiu, Fei ; Hung, TakFu ; Ho, Johnny C.

Author_Institution

Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, Hong Kong, China

fYear

2011

fDate

19-20 July 2011

Firstpage

207

Lastpage

210

Abstract

Solid-source chemical vapor deposition method is developed for the synthesis of crystalline GaAs NWs with high growth yield using Ni thin film as catalysts on amorphous SiO₂/Si substrates. The NW growth parameters are optimized at the source temperature of 900 °C, substrate temperature of 600 °C and H2 flow rate of 100 sccm for 30 min. The obtained NWs have a narrow distribution of diameters (21.0 ± 4.0 nm), with the length exceeding 10 μm. The NWs are grown along different crystallographic directions with low defect densities observed.

Keywords

III-V semiconductors; chemical vapour deposition; crystal defects; gallium arsenide; nanofabrication; nanowires; semiconductor growth; GaAs; SiO₂-Si; crystallographic directions; defect densities; growth yield; nanowires; solid-source chemical vapor deposition; temperature 600 degC; temperature 900 degC; Coatings; Gallium arsenide; Nanowires; Nickel; Silicon; Substrates; Surface treatment; GaAs nanowires; Ni catalysts; solid-source chemical vapor deposition;

fLanguage

English

Publisher

ieee

Conference_Titel

Quality Electronic Design (ASQED), 2011 3rd Asia Symposium on

Conference_Location

Kuala Lumpur

Print_ISBN

978-1-4577-0145-0

Type

conf

DOI

10.1109/ASQED.2011.6111746

Filename

6111746