• DocumentCode
    2760269
  • Title

    A high performance Ka-band push-push oscillator design using finite ground cpw structure

  • Author

    Zou, Yu-Lin ; Chen, I-Shan ; Chiou, Hwann-Kaeo

  • Author_Institution
    Nat. Central Univ., Taoyuan
  • fYear
    2006
  • fDate
    12-15 Dec. 2006
  • Firstpage
    751
  • Lastpage
    754
  • Abstract
    A Ka-band push-push oscillator and a Ku- band fundamental oscillator designed using GaAs pHEMT 0.15 mum technology are reported in this paper. The use of finite ground CPW structure that enhanced Q value of the passive element and improved the phase noise with the value of -113.2 dBc/Hz at 1 MHz offset of the push-push oscillator. The push-push oscillator achieves an oscillating frequency of 30.3 GHz while exhibiting a maximum output power of -1.5 dBm with the DC power consumption of 29 mW, together with a figure-of-merit (FOM) of -188.2 dBc/Hz at 1 MHz offset.
  • Keywords
    HEMT integrated circuits; III-V semiconductors; coplanar waveguides; gallium arsenide; microwave oscillators; millimetre wave oscillators; phase noise; figure-of-merit; finite ground CPW structure; fundamental oscillator; pHEMT; passive element; phase noise; push-push oscillator; Circuit topology; Coplanar waveguides; Equivalent circuits; Feedback; Frequency; Impedance; Inductors; Microwave oscillators; PHEMTs; Phase noise; FOM; Ka-band; oscillator; phase noise; push-push;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2006. APMC 2006. Asia-Pacific
  • Conference_Location
    Yokohama
  • Print_ISBN
    978-4-902339-08-6
  • Electronic_ISBN
    978-4-902339-11-6
  • Type

    conf

  • DOI
    10.1109/APMC.2006.4429524
  • Filename
    4429524