Title :
RESET-first Resistance Switching Mechanism of HfO2 films with Ti electrode
Author :
Kim, Jonggi ; Mok, In-Su ; Lee, Sunghoon ; Lee, Kyumin ; Sohn, Hyunchul
Author_Institution :
Dept. of Mater. Sci. & Eng., Yonsei Univ., Seoul, South Korea
Abstract :
RESET-first resistive switching mechanism in HfO2-x with Ti electrode was studied. RESET resistive switching was observed in annealed Ti/HfO2 film. The redox phenomenon from Ti/HfO2 to TiOx/HfO2-x was investigated with high angle annular dark field-scanning transmission electron microscopy, EDX, and x-ray photoelectron spectroscopy. Analysis shows that redox reaction from Ti/HfO2 to TiOx/HfO2-x was responsible for an increase of initial current with increasing the post-annealing temperature and the migration of oxygen ions at interface region under external electrical bias was contributed to bipolar resistive switching behavior.
Keywords :
X-ray chemical analysis; X-ray photoelectron spectra; annealing; electrodes; hafnium compounds; ions; oxidation; random-access storage; reduction (chemical); titanium; EDX; RESET; Ti-HfO2; X-ray photoelectron spectroscopy; annealed film; bipolar resistive switching behavior; electrode; external electrical bias; high angle annular dark field-scanning transmission electron microscopy; oxygen ion migration; post-annealing temperature; redox reaction; resistance switching mechanism; resistive random access memory; Annealing; Electrodes; Films; Hafnium compounds; Nickel; Switches;
Conference_Titel :
Interconnect Technology Conference (IITC), 2012 IEEE International
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-4673-1138-0
Electronic_ISBN :
pending
DOI :
10.1109/IITC.2012.6251589
